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Nanotechnology Journals | Applied Physics Journals | Journal of Applied Physics & Nanotechnology | Scient Open Access
Journal of Applied Physics & Nanotechnology


Short Communication

Technology of Obtaining tsi-Si Structures and Photoelectric Properties

Maharramov AM, Abasov FP, Shirin-zada AA, Kazimov NF

Correspondence Address :

Abasov FP
Institute of Radiation Problems
AZ 1143, Baku, B. Vahabzade Street 9

Received on: January 05, 2018, Accepted on: January 24, 2018, Published on: February 06, 2018

Citation: Maharramov AM, Abasov FP, Shirin-zada AA and Kazimov NF (2018). Technology of Obtaining PtSi-Si Structures and Photoelectric Properties

Copyright: 2018 Abasov FP, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

  • Abstract

Developed and analyzed metal-semiconductor structure silicon based photo detectors with high sensitivity in the field of integrated short - range. Intensive development of modern science and technology is very closely related to semiconductor physics. As a result of the extensive research of semiconductor, it was possible to develop space and military technology, as well as various areas of the national economy. It is shown that the metal-semiconductor structure can improve the photovoltaic parameters of conventional detectors.
Keywords: Silicon based photo receivers, Metal-semiconductor structure